PART |
Description |
Maker |
K6R4004C1C-C K6R4004C1C-I20 K6R4004C1C-C10 K6R4004 |
1Mx4 Bit High Speed Static RAM(5V Operating). 1Mx4位高速静态RAMV的工作) 1Mx4 Bit High Speed Static RAM(5V Operating). 1Mx4位高速静RAMV的工作) 1Mx4 Bit High Speed Static RAM(5V Operating). 1Mx4位高速静态RAM5V的工作)
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
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K6R4016V1 K6R4016V1D K64004C1D |
1Mx4 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
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Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
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KM68257C-12 KM68257CJ-12 KM68257CJ-20 KM68257CL-12 |
32Kx8 bit high speed static RAM (5V operating), 20ns 32Kx8 bit high speed static RAM (5V operating), 15ns 32Kx8 bit high speed static RAM (5V operating), 12ns 32Kx8 Bit High Speed Static RAM(5V Operating(, Evolutionary Pin out. Operated at Commercial Temperature Range. 32Kx8位高速静态RAM5V的工作(,进化引脚了。在商业温度范围工作
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Samsung Electronic SAMSUNG[Samsung semiconductor] Samsung Semiconductor Co., Ltd.
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K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作)。在经营商业和工业温度范围 RES-140 0.0625W 1% THICK FILM 128K x 8 high speed static RAM, 5V operating, 15ns 128K x 8 high speed static RAM, 5V operating, 10ns
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
CXK5B81020J CXK5B81020J-12 CXK5B81020TM CXK5B81020 |
131072-word ′ 8-bit High Speed Bi-CMOS Static RAM 131072-word ? 8-bit High Speed Bi-CMOS Static RAM 131072-word 8-bit High Speed Bi-CMOS Static RAM 131072-word 8-bit High Speed Bi-CMOS Static RAM 131072字?8位高速双CMOS静态RAM 128 x 64 pixel format, LED Backlight available 131072字?8位高速双CMOS静态RAM
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SONY[Sony Corporation] Sony, Corp.
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HM628128FP-10 HM628128FP-12 HM628128FP-7 HM628128F |
100ns; V(cc): -0.5 to 7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM 120ns; V(cc): -0.5 to 7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM
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HITACHI[Hitachi Semiconductor]
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W241024A W241024AJ- W241024AI-12 W241024AQ-20 W241 |
128L X 8 HIGH SPEED CMOS STATIC RAM 128K X 8 STANDARD SRAM, 15 ns, PDSO32 128L X 8 HIGH SPEED CMOS STATIC RAM 128K X 8 STANDARD SRAM, 20 ns, PDSO32 From old datasheet system 128*8HIGH SPEED COMOS STATIC RAM
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Winbond Electronics, Corp. Winbond Electronics Corp WINBOND[Winbond]
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Y51-03 Y51-02 Y21-01 Y31-01 Y41-03 Y61-03 Y21-02 Y |
VALVE STARTUP 3/8 阀门启8 VALVE SHUT OFF 1/8 阀门关闭了1 / 8 VALVE STARTUP 1/2 阀门启 / 2 VALVE SHUT OFF 1/4 阀门关闭了1 / 4 VALVE SHUT OFF 3/4 VALVE STARTUP 1/4 IC SRAM 512KX36 2.5V SYN 100TQFP VALVE SHUT OFF 1/2 BRACKET T 1-Mbit (128K x 8) Static RAM IC MCU 8K FULL SPEED USB 28SDIP BRACKET L 1M/512K FAST ASYNC SRAM 5V, 3.3V, ISR High-Performance CPLDs 256K (32K x 8) Static RAM -bit AVR Microcontroller with 8K Bytes In- System Programmable Flash SPACER EZ-USB FX2LP USB Microcontroller High-Speed USB Peripheral Controller 1-Mbit (64K x 16) Static RAM 2M x 8 Static RAM 36-Mbit DDR-II SRAM 2-Word Burst Architecture BRANCH UNIT
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AMIC Technology, Corp. Vishay Intertechnology, Inc. NXP Semiconductors N.V. Harwin PLC
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IS61LV6416 IS61LV6416-10 IS61LV6416-10B IS61LV6416 |
64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3 V SUPPLY 64K的16高速CMOS静态RAM.3 V电源 ASYNCHRONOUS STATIC RAM
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ETC ICSI[Integrated Circuit Solution Inc]
|
CXK582000TM/YM/M-10LL CXK582000TM/YM/M-85LL |
262144-word x 8-bit High Speed CMOS Static RAM 262144字8位高速CMOS静态RAM 262144-word x 8-bit High Speed CMOS Static RAM
|
Vishay Intertechnology, Inc. SONY
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IS61LV6424 IS61LV6424-10TQ IS61LV6424-9TQ IS61LV64 |
64K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY ASYNCHRONOUS STATIC RAM
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ICSI[Integrated Circuit Solution Inc]
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UPD424800G5-10-7JD UPD424800G5-10-7KD UPD424800V-8 |
256K (32K x 8) Static RAM 8K x 8 Static RAM RoboClock® High-speed Multi-phase PLL Clock Buffer x8 Fast Page Mode DRAM x8快速页面模式的DRAM
|
NEC TOKIN, Corp.
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